COMPONENT SELECTION / LANGOM

Hailan Microelectronics components.

Select MOSFET bare die, packaged circuits, regulators, gate drivers and signal-interface devices from Wuxi Hailan Microelectronics Technology Co., Ltd.

380 semiconductor models · 27 connector & accessory rangesSend a bill of materials ↗

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Check whether the selected item is bare die or a packaged device. Suffixes are retained as distinct designations. Guide parameters support initial selection; request the exact datasheet and operating limits for qualification.

187 selection records

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Hailan MicroelectronicsBare die

HLW2101

MOSFET bare die

LANGOM referenceLAG-HL-HLW2101

HLW2101 is an N-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: N-channel
Drain-source voltage VDSS: 30 V
Gate-source voltage VGSS: ±12 V
Drain current ID: 4.6 A
Pulsed drain current IDM: 15 A
On-resistance RDS(on), guide value: 33 mΩ
VGS(th), guide Min / Max: 0.7 / 1.8 V
Input capacitance CISS, typical: 265 pF
Die dimensions, excluding scribe lanes: 655 x 550 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

Enquire about HLW2101

Hailan MicroelectronicsBare die

HLW1700

MOSFET bare die

LANGOM referenceLAG-HL-HLW1700

HLW1700 is an N-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: N-channel
Drain-source voltage VDSS: 60 V
Gate-source voltage VGSS: ±20 V
Drain current ID: 0.3 A
Pulsed drain current IDM: 0.8 A
On-resistance RDS(on), guide value: 1800 mΩ
VGS(th), guide Min / Max: 0.7 / 1.8 V
Input capacitance CISS, typical: 21 pF
Die dimensions, excluding scribe lanes: 340 x 270 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

Enquire about HLW1700

Hailan MicroelectronicsBare die

HLW1701

MOSFET bare die

LANGOM referenceLAG-HL-HLW1701

HLW1701 is an N-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: N-channel
Drain-source voltage VDSS: 60 V
Gate-source voltage VGSS: ±20 V
Drain current ID: 5 A
Pulsed drain current IDM: 20 A
On-resistance RDS(on), guide value: 25 mΩ
VGS(th), guide Min / Max: 1.2 / 2.5 V
Input capacitance CISS, typical: 970 pF
Die dimensions, excluding scribe lanes: 1442 x 1080 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

Enquire about HLW1701

Hailan MicroelectronicsBare die

HLW1706

MOSFET bare die

LANGOM referenceLAG-HL-HLW1706

HLW1706 is an N-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: N-channel
Drain-source voltage VDSS: 100 V
Gate-source voltage VGSS: ±20 V
Drain current ID: 10 A
Pulsed drain current IDM: 40 A
On-resistance RDS(on), guide value: 90 mΩ
VGS(th), guide Min / Max: 1.2 / 2.0 V
Input capacitance CISS, typical: 950 pF
Die dimensions, excluding scribe lanes: 1540 x 1000 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

Enquire about HLW1706

Hailan MicroelectronicsBare die

HLW1707

MOSFET bare die

LANGOM referenceLAG-HL-HLW1707

HLW1707 is an N-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: N-channel
Drain-source voltage VDSS: 100 V
Gate-source voltage VGSS: ±20 V
Drain current ID: 15 A
Pulsed drain current IDM: 60 A
On-resistance RDS(on), guide value: 65 mΩ
VGS(th), guide Min / Max: 1 / 2.5 V
Input capacitance CISS, typical: 830 pF
Die dimensions, excluding scribe lanes: 1840 x 1049 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

Enquire about HLW1707

Hailan MicroelectronicsBare die

HLW1711

MOSFET bare die

LANGOM referenceLAG-HL-HLW1711

HLW1711 is an N-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: N-channel
Drain-source voltage VDSS: 100 V
Gate-source voltage VGSS: ±20 V
Drain current ID: 30 A
Pulsed drain current IDM: 90 A
On-resistance RDS(on), guide value: 20 mΩ
VGS(th), guide Min / Max: 1.1 / 2.5 V
Input capacitance CISS, typical: 1300 pF
Die dimensions, excluding scribe lanes: 1720 x 1500 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

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Hailan MicroelectronicsBare die

HLW1713

MOSFET bare die

LANGOM referenceLAG-HL-HLW1713

HLW1713 is an N-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: N-channel
Drain-source voltage VDSS: 100 V
Gate-source voltage VGSS: ±20 V
Drain current ID: 45 A
Pulsed drain current IDM: 120 A
On-resistance RDS(on), guide value: 8.5 mΩ
VGS(th), guide Min / Max: 1.1 / 2.5 V
Input capacitance CISS, typical: 2580 pF
Die dimensions, excluding scribe lanes: 3120 x 1720 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

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Hailan MicroelectronicsBare die

HLW1712

MOSFET bare die

LANGOM referenceLAG-HL-HLW1712

HLW1712 is an N-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: N-channel
Drain-source voltage VDSS: 100 V
Gate-source voltage VGSS: ±20 V
Drain current ID: 60 A
Pulsed drain current IDM: 160 A
On-resistance RDS(on), guide value: 6.5 mΩ
VGS(th), guide Min / Max: 2.5 / 4.5 V
Input capacitance CISS, typical: 4250 pF
Die dimensions, excluding scribe lanes: 3800 x 2800 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

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Hailan MicroelectronicsBare die

HLW1715

MOSFET bare die

LANGOM referenceLAG-HL-HLW1715

HLW1715 is an N-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: N-channel
Drain-source voltage VDSS: 150 V
Gate-source voltage VGSS: ±20 V
Drain current ID: 18 A
Pulsed drain current IDM: 54 A
On-resistance RDS(on), guide value: 55 mΩ
VGS(th), guide Min / Max: 2.5 / 4.5 V
Input capacitance CISS, typical: 600 pF
Die dimensions, excluding scribe lanes: 1970 x 1730 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

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Hailan MicroelectronicsBare die

HLW1714

MOSFET bare die

LANGOM referenceLAG-HL-HLW1714

HLW1714 is an N-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: N-channel
Drain-source voltage VDSS: 150 V
Gate-source voltage VGSS: ±20 V
Drain current ID: 60 A
Pulsed drain current IDM: 120 A
On-resistance RDS(on), guide value: 8 mΩ
VGS(th), guide Min / Max: 2.0 / 4.0 V
Input capacitance CISS, typical: 3200 pF
Die dimensions, excluding scribe lanes: 5000 x 3100 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

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Hailan MicroelectronicsBare die

HLW1716

MOSFET bare die

LANGOM referenceLAG-HL-HLW1716

HLW1716 is an N-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: N-channel
Drain-source voltage VDSS: 150 V
Gate-source voltage VGSS: ±20 V
Drain current ID: 80 A
Pulsed drain current IDM: 160 A
On-resistance RDS(on), guide value: 5.5 mΩ
VGS(th), guide Min / Max: 2.0 / 4.0 V
Input capacitance CISS, typical: 4320 pF
Die dimensions, excluding scribe lanes: 6160 x 4660 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

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Hailan MicroelectronicsBare die

HLW1717

MOSFET bare die

LANGOM referenceLAG-HL-HLW1717

HLW1717 is an N-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: N-channel
Drain-source voltage VDSS: 250 V
Gate-source voltage VGSS: ±20 V
Drain current ID: 60 A
Pulsed drain current IDM: 160 A
On-resistance RDS(on), guide value: 16 mΩ
VGS(th), guide Min / Max: 2.5 / 4.5 V
Input capacitance CISS, typical: 5420 pF
Die dimensions, excluding scribe lanes: 6520 x 4620 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

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Hailan MicroelectronicsBare die

HLW1801

MOSFET bare die

LANGOM referenceLAG-HL-HLW1801

HLW1801 is a P-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: P-channel
Drain-source voltage VDSS: -30 V
Gate-source voltage VGSS: ±20 V
Drain current ID: -2 A
Pulsed drain current IDM: -5 A
On-resistance RDS(on), guide value: 70 mΩ
VGS(th), guide Min / Max: -1 / -2.5 V
Input capacitance CISS, typical: 220 pF
Die dimensions, excluding scribe lanes: 700 x 600 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

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Hailan MicroelectronicsBare die

HLW1802

MOSFET bare die

LANGOM referenceLAG-HL-HLW1802

HLW1802 is a P-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: P-channel
Drain-source voltage VDSS: -30 V
Gate-source voltage VGSS: ±20 V
Drain current ID: -5 A
Pulsed drain current IDM: -10 A
On-resistance RDS(on), guide value: 40 mΩ
VGS(th), guide Min / Max: -1.1 / -2.5 V
Input capacitance CISS, typical: 510 pF
Die dimensions, excluding scribe lanes: 980 x 680 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

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Hailan MicroelectronicsBare die

HLW1803B

MOSFET bare die

LANGOM referenceLAG-HL-HLW1803B

HLW1803B is a P-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: P-channel
Drain-source voltage VDSS: -30 V
Gate-source voltage VGSS: ±20 V
Drain current ID: -12 A
Pulsed drain current IDM: -48 A
On-resistance RDS(on), guide value: 12 mΩ
VGS(th), guide Min / Max: -1 / -2.0 V
Input capacitance CISS, typical: 1740 pF
Die dimensions, excluding scribe lanes: 1900 x 1462 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

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Hailan MicroelectronicsBare die

HLW1804

MOSFET bare die

LANGOM referenceLAG-HL-HLW1804

HLW1804 is a P-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: P-channel
Drain-source voltage VDSS: -60 V
Gate-source voltage VGSS: ±20 V
Drain current ID: -18 A
Pulsed drain current IDM: -36 A
On-resistance RDS(on), guide value: 40 mΩ
VGS(th), guide Min / Max: -1 / -2.5 V
Input capacitance CISS, typical: 1580 pF
Die dimensions, excluding scribe lanes: 1900 x 1110 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

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Hailan MicroelectronicsBare die

HLW1806

MOSFET bare die

LANGOM referenceLAG-HL-HLW1806

HLW1806 is a P-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: P-channel
Drain-source voltage VDSS: -60 V
Gate-source voltage VGSS: ±20 V
Drain current ID: -10 A
Pulsed drain current IDM: -20 A
On-resistance RDS(on), guide value: 51 mΩ
VGS(th), guide Min / Max: -1 / -2.5 V
Input capacitance CISS, typical: 920 pF
Die dimensions, excluding scribe lanes: 1410 x 1040 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

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Hailan MicroelectronicsBare die

HLW1807

MOSFET bare die

LANGOM referenceLAG-HL-HLW1807

HLW1807 is a P-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: P-channel
Drain-source voltage VDSS: -60 V
Gate-source voltage VGSS: ±20 V
Drain current ID: -35 A
Pulsed drain current IDM: -90 A
On-resistance RDS(on), guide value: 20 mΩ
VGS(th), guide Min / Max: -2 / -3.5 V
Input capacitance CISS, typical: 3080 pF
Die dimensions, excluding scribe lanes: 2500 x 1700 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

Enquire about HLW1807

Hailan MicroelectronicsBare die

HLW1811

MOSFET bare die

LANGOM referenceLAG-HL-HLW1811

HLW1811 is a P-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: P-channel
Drain-source voltage VDSS: -60 V
Gate-source voltage VGSS: ±20 V
Drain current ID: -60 A
Pulsed drain current IDM: -180 A
On-resistance RDS(on), guide value: 6 mΩ
VGS(th), guide Min / Max: -1.5 / -2.5 V
Input capacitance CISS, typical: 5260 pF
Die dimensions, excluding scribe lanes: 3400 x 2420 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

Enquire about HLW1811

Hailan MicroelectronicsBare die

HLW1812

MOSFET bare die

LANGOM referenceLAG-HL-HLW1812

HLW1812 is a P-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: P-channel
Drain-source voltage VDSS: -60 V
Gate-source voltage VGSS: ±20 V
Drain current ID: -6 A
Pulsed drain current IDM: -12 A
On-resistance RDS(on), guide value: 60 mΩ
VGS(th), guide Min / Max: -1.0 / -2.5 V
Input capacitance CISS, typical: 740 pF
Die dimensions, excluding scribe lanes: 1120 x 900 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

Enquire about HLW1812

Hailan MicroelectronicsBare die

HLW1809

MOSFET bare die

LANGOM referenceLAG-HL-HLW1809

HLW1809 is a P-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: P-channel
Drain-source voltage VDSS: -100 V
Gate-source voltage VGSS: ±20 V
Drain current ID: -12 A
Pulsed drain current IDM: -36 A
On-resistance RDS(on), guide value: 70 mΩ
VGS(th), guide Min / Max: -1 / -2.5 V
Input capacitance CISS, typical: 3500 pF
Die dimensions, excluding scribe lanes: 2460 x 1800 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

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Hailan MicroelectronicsBare die

HLW1810

MOSFET bare die

LANGOM referenceLAG-HL-HLW1810

HLW1810 is a P-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: P-channel
Drain-source voltage VDSS: -100 V
Gate-source voltage VGSS: ±20 V
Drain current ID: -20 A
Pulsed drain current IDM: -60 A
On-resistance RDS(on), guide value: 40 mΩ
VGS(th), guide Min / Max: -1.5 / -2.5 V
Input capacitance CISS, typical: 8030 pF
Die dimensions, excluding scribe lanes: 3270 x 2610 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

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Hailan MicroelectronicsBare die

HLW1831

MOSFET bare die

LANGOM referenceLAG-HL-HLW1831

HLW1831 is a P-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: P-channel
Drain-source voltage VDSS: -100 V
Gate-source voltage VGSS: ±20 V
Drain current ID: -25 A
Pulsed drain current IDM: -75 A
On-resistance RDS(on), guide value: 32 mΩ
VGS(th), guide Min / Max: -1.0 / -2.5 V
Input capacitance CISS, typical: 3400 pF
Die dimensions, excluding scribe lanes: 2700 x 2200 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

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Hailan MicroelectronicsBare die

HLW1832

MOSFET bare die

LANGOM referenceLAG-HL-HLW1832

HLW1832 is a P-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.

Channel type: P-channel
Drain-source voltage VDSS: -100 V
Gate-source voltage VGSS: ±20 V
Drain current ID: -45 A
Pulsed drain current IDM: -140 A
On-resistance RDS(on), guide value: 18 mΩ
VGS(th), guide Min / Max: -2.0 / -4.0 V
Input capacitance CISS, typical: 6900 pF
Die dimensions, excluding scribe lanes: 3800 x 2800 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 2

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Hailan MicroelectronicsBare die

HLW2110

Low-voltage supply modulation

LANGOM referenceLAG-HL-HLW2110

HLW2110 is a GaAs amplifier supply-modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Output channels: 1
Supply voltage VDD: 1.8V-6V
Maximum output current: 3A
Maximum rise / fall time: 15ns/10ns
Die dimensions, excluding scribe lanes: 850 x 900 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 3

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Hailan MicroelectronicsBare die

HLW2120

Low-voltage supply modulation

LANGOM referenceLAG-HL-HLW2120

HLW2120 is a GaAs amplifier supply-modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Output channels: 1 or 2
Supply voltage VDD: 1.8V-6V
Maximum output current: 6A/3A
Maximum rise / fall time: 15ns/10ns
Die dimensions, excluding scribe lanes: 850 x 1880 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 3

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Hailan MicroelectronicsBare die

HLW2111B

Low-voltage supply modulation

LANGOM referenceLAG-HL-HLW2111B

HLW2111B is a GaAs amplifier supply-modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Output channels: 1
Supply voltage VDD: 3V-6V
Maximum output current: 0.5A
Maximum rise / fall time: 7ns/13ns
Die dimensions, excluding scribe lanes: 740 x 850 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 3

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Hailan MicroelectronicsBare die

HLW2112

Low-voltage supply modulation

LANGOM referenceLAG-HL-HLW2112

HLW2112 is a GaAs amplifier supply-modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Output channels: 1
Supply voltage VDD: 4.5V-12V
Maximum output current: 1A
Maximum rise / fall time: 20ns/20ns
Die dimensions, excluding scribe lanes: 740 x 850 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 3

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Hailan MicroelectronicsBare die

HLW2117

Low-voltage supply modulation

LANGOM referenceLAG-HL-HLW2117

HLW2117 is a GaAs amplifier supply-modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Output channels: 1
Supply voltage VDD: 3V-6V
Maximum output current: 1.8A
Maximum rise / fall time: 15ns/15ns
Die dimensions, excluding scribe lanes: 1030 x 950 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 3

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Hailan MicroelectronicsBare die

HLW2118

Low-voltage supply modulation

LANGOM referenceLAG-HL-HLW2118

HLW2118 is a GaAs amplifier supply-modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Output channels: 1
Supply voltage VDD: 5V-10V
Maximum output current: 1A
Maximum rise / fall time: 20ns/20ns
Die dimensions, excluding scribe lanes: 1550 x 950 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 3

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Hailan MicroelectronicsBare die

HLW2016

Low-voltage supply modulation

LANGOM referenceLAG-HL-HLW2016

HLW2016 is a GaAs amplifier supply-modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Output channels: 1
Supply voltage VDD: 5V-22V
Maximum output current: 3A
Maximum rise / fall time: 20ns/20ns
Die dimensions, excluding scribe lanes: 1730 x 860 µm
Driver architecture: Integrated PMOS
Supply voltage VCC: 5V-22V

Source: Hailan Product Selection Guide, 2026 V2 · pages 3, 4

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Hailan MicroelectronicsBare die

HLW2501

Low-voltage supply modulation

LANGOM referenceLAG-HL-HLW2501

HLW2501 is a GaAs amplifier supply-modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

HLW2501 and HLW2501M share a specification row; the guide does not explain the M suffix.

Output channels: 1
Supply voltage VDD: 5V-22V
Maximum output current: 2A
Maximum rise / fall time: 18ns/20ns
Die dimensions, excluding scribe lanes: 1400 x 900 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 3

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Hailan MicroelectronicsBare die

HLW2501M

Low-voltage supply modulation

LANGOM referenceLAG-HL-HLW2501M

HLW2501M is a GaAs amplifier supply-modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

HLW2501 and HLW2501M share a specification row; the guide does not explain the M suffix.

Output channels: 1
Supply voltage VDD: 5V-22V
Maximum output current: 2A
Maximum rise / fall time: 18ns/20ns
Die dimensions, excluding scribe lanes: 1400 x 900 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 3

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Hailan MicroelectronicsBare die

HLW2119

Low-voltage supply modulation

LANGOM referenceLAG-HL-HLW2119

HLW2119 is a GaAs amplifier supply-modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Output channels: 2
Supply voltage VDD: 3V-6V
Maximum output current: Channel A: 1A Channel B: 0.3A
Maximum rise / fall time: 15ns/15ns
Die dimensions, excluding scribe lanes: 1030 x 950 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 3

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Hailan MicroelectronicsBare die

HLW2113

Low-voltage supply modulation

LANGOM referenceLAG-HL-HLW2113

HLW2113 is a GaAs amplifier supply-modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Output channels: 2
Supply voltage VDD: 4.5V-12V
Maximum output current: Channel A: 1.5A Channel B: 1.5A VG output: ±20mA
Maximum rise / fall time: 15ns/20ns
Die dimensions, excluding scribe lanes: 1160 x 1480 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 3

Enquire about HLW2113

Hailan MicroelectronicsBare die

HLW2114

Low-voltage supply modulation

LANGOM referenceLAG-HL-HLW2114

HLW2114 is a GaAs amplifier supply-modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Output channels: 3
Supply voltage VDD: 4.5V-20V
Maximum output current: Channel A: 2A Channel B: 2A Channel C: 0.3A
Maximum rise / fall time: 15ns/20ns
Die dimensions, excluding scribe lanes: 1500 x 2475 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 3

Enquire about HLW2114

Hailan MicroelectronicsBare die

HLW2121

Low-voltage supply modulation

LANGOM referenceLAG-HL-HLW2121

HLW2121 is a GaAs amplifier supply-modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Output channels: 3
Supply voltage VDD: A/B: 4.5V-20V Channel C: 2.5V-7V
Maximum output current: Channel A: 2A Channel B: 2A Channel C: 0.3A VG output: ±100mA
Maximum rise / fall time: 15ns/20ns
Die dimensions, excluding scribe lanes: 1500 x 3160 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 3

Enquire about HLW2121

Hailan MicroelectronicsBare die

HLW2502

Low-voltage supply modulation

LANGOM referenceLAG-HL-HLW2502

HLW2502 is a GaAs amplifier supply-modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Output channels: 2
Supply voltage VDD: 4.5V-12V
Maximum output current: Channel A: 1.5A Channel B: 1.5A
Maximum rise / fall time: 5ns/5ns
Die dimensions, excluding scribe lanes: 1150 x 1150 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 3

Enquire about HLW2502

Hailan MicroelectronicsBare die

HLW2201B

High-voltage supply modulation

LANGOM referenceLAG-HL-HLW2201B

HLW2201B is a GaN amplifier drain-supply modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Driver architecture: External PMOS driver
Supply voltage VCC: 9V-90V
Maximum rise / fall time: 30ns/40ns
Die dimensions, excluding scribe lanes: 2650 x 2380 µm
External transistor required: PMOS

Source: Hailan Product Selection Guide, 2026 V2 · page 4

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Hailan MicroelectronicsBare die

HLW2801

High-voltage supply modulation

LANGOM referenceLAG-HL-HLW2801

HLW2801 is a GaN amplifier drain-supply modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Driver architecture: External PMOS driver
Supply voltage VCC: 9V-90V
Maximum rise / fall time: 30ns/40ns
Die dimensions, excluding scribe lanes: 2400 x 2200 µm
External transistor required: PMOS

Source: Hailan Product Selection Guide, 2026 V2 · page 4

Enquire about HLW2801

Hailan MicroelectronicsBare die

HLW2202B

High-voltage supply modulation

LANGOM referenceLAG-HL-HLW2202B

HLW2202B is a GaN amplifier drain-supply modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Driver architecture: External NMOS driver
Supply voltage VCC: 9V-100V
Maximum rise / fall time: 20ns/30ns
Die dimensions, excluding scribe lanes: 2670 x 2390 µm
External transistor required: NMOS

Source: Hailan Product Selection Guide, 2026 V2 · page 4

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Hailan MicroelectronicsBare die

HLW2203

High-voltage supply modulation

LANGOM referenceLAG-HL-HLW2203

HLW2203 is a GaN amplifier drain-supply modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Driver architecture: External PMOS driver
Supply voltage VCC: 9V-60V
Maximum rise / fall time: 30ns/30ns
Die dimensions, excluding scribe lanes: 1350 x 1500 µm
External transistor required: PMOS

Source: Hailan Product Selection Guide, 2026 V2 · page 4

Enquire about HLW2203

Hailan MicroelectronicsBare die

HLW2204A

High-voltage supply modulation

LANGOM referenceLAG-HL-HLW2204A

HLW2204A is a GaN amplifier drain-supply modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Driver architecture: Integrated PMOS
Supply voltage VCC: 4V-40V
Maximum rise / fall time: 30ns/30ns
Die dimensions, excluding scribe lanes: 1320 x 1640 µm
Maximum output current: 3.5A

Source: Hailan Product Selection Guide, 2026 V2 · page 4

Enquire about HLW2204A

Hailan MicroelectronicsBare die

HLW2204B

High-voltage supply modulation

LANGOM referenceLAG-HL-HLW2204B

HLW2204B is a GaN amplifier drain-supply modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Driver architecture: Integrated PMOS
Supply voltage VCC: 4V-40V
Maximum rise / fall time: 30ns/30ns
Die dimensions, excluding scribe lanes: 1320 x 1640 µm
Maximum output current: 3.5A

Source: Hailan Product Selection Guide, 2026 V2 · page 4

Enquire about HLW2204B

Hailan MicroelectronicsBare die

HLW2208

High-voltage supply modulation

LANGOM referenceLAG-HL-HLW2208

HLW2208 is a GaN amplifier drain-supply modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Driver architecture: External PMOS driver with negative gate-bias driver
Supply voltage VCC: 9V-100V
Maximum rise / fall time: 20ns/30ns
Die dimensions, excluding scribe lanes: 1830 x 1930 µm
External transistor required: PMOS
Negative gate-bias output: -1.3 V to -3.5 V

Source: Hailan Product Selection Guide, 2026 V2 · page 4

Enquire about HLW2208

Hailan MicroelectronicsBare die

HLW2209

High-voltage supply modulation

LANGOM referenceLAG-HL-HLW2209

HLW2209 is a GaN amplifier drain-supply modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Driver architecture: High-voltage external PMOS driver
Supply voltage VCC: 7V-80V
Maximum rise / fall time: 10ns/15ns
Die dimensions, excluding scribe lanes: 1250 x 1500 µm
External transistor required: PMOS

Source: Hailan Product Selection Guide, 2026 V2 · page 4

Enquire about HLW2209

Hailan MicroelectronicsBare die

HLW2701

High-voltage supply modulation

LANGOM referenceLAG-HL-HLW2701

HLW2701 is a GaN amplifier drain-supply modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Driver architecture: Integrated PMOS with negative gate-bias driver
Supply voltage VCC: 5V-40V
Maximum rise / fall time: 20ns/30ns
Die dimensions, excluding scribe lanes: 1650 x 1950 µm
Maximum output current: 3A
Negative gate-bias output: -1.6 V to -2.65 V

Source: Hailan Product Selection Guide, 2026 V2 · page 4

Enquire about HLW2701

Hailan MicroelectronicsBare die

HLW2702

High-voltage supply modulation

LANGOM referenceLAG-HL-HLW2702

HLW2702 is a GaN amplifier drain-supply modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Driver architecture: Integrated PMOS with negative gate-bias driver
Supply voltage VCC: 5V-40V
Maximum rise / fall time: 20ns/30ns
Die dimensions, excluding scribe lanes: 1650 x 3150 µm
Maximum output current: 5A
Negative gate-bias output: -1.2 V to -3.2 V

Source: Hailan Product Selection Guide, 2026 V2 · page 4

Enquire about HLW2702

Hailan MicroelectronicsBare die

HLW2705

High-voltage supply modulation

LANGOM referenceLAG-HL-HLW2705

HLW2705 is a GaN amplifier drain-supply modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Driver architecture: Integrated PMOS
Supply voltage VCC: 5V-40V
Maximum rise / fall time: 20ns/30ns
Die dimensions, excluding scribe lanes: 2150 x 2500 µm
Maximum output current: 5A

Source: Hailan Product Selection Guide, 2026 V2 · page 4

Enquire about HLW2705

Hailan MicroelectronicsBare die

HLW2706

High-voltage supply modulation

LANGOM referenceLAG-HL-HLW2706

HLW2706 is a GaN amplifier drain-supply modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Driver architecture: Integrated PMOS
Supply voltage VCC: 5V-65V
Maximum rise / fall time: 20ns/30ns
Die dimensions, excluding scribe lanes: 2500 x 3145 µm
Maximum output current: 5A

Source: Hailan Product Selection Guide, 2026 V2 · page 4

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Hailan MicroelectronicsBare die

HLW2001

Negative gate-bias drivers

LANGOM referenceLAG-HL-HLW2001

HLW2001 is a negative gate-bias driver die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Output-voltage range: -0.84V~-0.99V -2.2V~-2.5V
Maximum output current: ±50mA
Die dimensions, excluding scribe lanes: 1260 x 730 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 5

Enquire about HLW2001

Hailan MicroelectronicsBare die

HLW2002

Negative gate-bias drivers

LANGOM referenceLAG-HL-HLW2002

HLW2002 is a negative gate-bias driver die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Output-voltage range: -0.5V~-3.5V
Maximum output current: ±300mA
Die dimensions, excluding scribe lanes: 1500 x 1140 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 5

Enquire about HLW2002

Hailan MicroelectronicsBare die

HLW2003

Negative gate-bias drivers

LANGOM referenceLAG-HL-HLW2003

HLW2003 is a negative gate-bias driver die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Output-voltage range: -0.5V~-3.5V
Maximum output current: ±150mA
Die dimensions, excluding scribe lanes: 900 x 860 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 5

Enquire about HLW2003

Hailan MicroelectronicsBare die

HLW2004

Negative gate-bias drivers

LANGOM referenceLAG-HL-HLW2004

HLW2004 is a negative gate-bias driver die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Output-voltage range: -0.5V~-3.7V
Maximum output current: ±300mA
Die dimensions, excluding scribe lanes: 1260 x 1500 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 5

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Hailan MicroelectronicsBare die

HLW2005

Negative gate-bias drivers

LANGOM referenceLAG-HL-HLW2005

HLW2005 is a negative gate-bias driver die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Output-voltage range: -0.35V~-3.65V
Maximum output current: ±100mA
Die dimensions, excluding scribe lanes: 1500 x 580 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 5

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Hailan MicroelectronicsBare die

HLW2006

Negative gate-bias drivers

LANGOM referenceLAG-HL-HLW2006

HLW2006 is a negative gate-bias driver die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Output-voltage range: -0.4V~-4.5V
Maximum output current: ±400mA
Die dimensions, excluding scribe lanes: 850 x 750 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 5

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HLW2007

Negative gate-bias drivers

LANGOM referenceLAG-HL-HLW2007

HLW2007 is a negative gate-bias driver die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Output-voltage range: -0.55V~-3.5V
Maximum output current: ±100mA
Die dimensions, excluding scribe lanes: 720 x 860 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 5

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HLW2008

Negative gate-bias drivers

LANGOM referenceLAG-HL-HLW2008

HLW2008 is a negative gate-bias driver die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Output-voltage range: -0.55V~-3.5V
Maximum output current: ±100mA

Source: Hailan Product Selection Guide, 2026 V2 · page 5

Enquire about HLW2008

Hailan MicroelectronicsPackaged IC

HLW1826HC

Positive-to-negative converters

LANGOM referenceLAG-HL-HLW1826HC

HLW1826HC is a positive-to-negative voltage converter listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Format: QFN10, 1.4 x 1.8 mm
Input-voltage range: 2.5 to 5.5 V
Maximum output current: 320 mA
Output 1: -VIN
Output 2: adjustable
Maximum quiescent current: 5.0 mA
Typical switching frequency: 1.0 MHz
Package, guide designation: QFN1418-10
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · pages 5, 11

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HLW5501

Positive-to-negative converters

LANGOM referenceLAG-HL-HLW5501

HLW5501 is a positive-to-negative voltage converter listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Format: Bare die or QFN3 x 3-16L plastic package
Input-voltage range: 3.3 to 5.5 V
Maximum output current: 400 mA
Output 1: -VIN
Output 2: adjustable or -4.8 / -4.5 / -4 / -3.5 / -3 / -2.5 / -1.8 V
Maximum quiescent current: 5.0 mA
Typical switching frequency: 1.0 MHz
Die dimensions, excluding scribe lanes: 1160 x 1710 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 5

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HLW5502

Positive-to-negative converters

LANGOM referenceLAG-HL-HLW5502

HLW5502 is a positive-to-negative voltage converter listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Format: Bare die or QFN3 x 3-16L plastic package
Input-voltage range: 3.3 to 5.5 V
Maximum output current: 400 mA
Output 1: -VIN
Output 2: adjustable or -4.8 / -4.5 / -4 / -3.5 / -3 / -2.5 / -1.8 V
Maximum quiescent current: 5.0 mA
Typical switching frequency: 1.0 MHz
Die dimensions, excluding scribe lanes: 1300 x 1820 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 5

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HLW1822

LDO regulators

LANGOM referenceLAG-HL-HLW1822

HLW1822 is a negative LDO regulator die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Input-voltage endpoints, guide order: -6.0 to -30.0 V
Maximum output current, signed guide value: -1.0 A
Output voltage: -5 V
Maximum quiescent current: 1.0 mA
Maximum dropout: 1.0 V
Die dimensions, excluding scribe lanes: 1450 x 1300 µm

Manufacturer-listed comparison references

79M05

For technical comparison. Electrical, pinout, package and application compatibility must be verified before substitution.

Source: Hailan Product Selection Guide, 2026 V2 · page 6

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Hailan MicroelectronicsBare die

HLW1825B

LDO regulators

LANGOM referenceLAG-HL-HLW1825B

HLW1825B is a negative LDO regulator die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Input-voltage endpoints, guide order: -4.0 to -30.0 V
Maximum output current, signed guide value: -0.5 A
Output voltage: -3 V
Maximum quiescent current: 1.0 mA
Maximum dropout: 1.0 V
Die dimensions, excluding scribe lanes: 1230 x 1550 µm

Manufacturer-listed comparison references

79M03

For technical comparison. Electrical, pinout, package and application compatibility must be verified before substitution.

Source: Hailan Product Selection Guide, 2026 V2 · page 6

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HLW1922

LDO regulators

LANGOM referenceLAG-HL-HLW1922

HLW1922 is a negative LDO regulator die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Input-voltage endpoints, guide order: -3.0 to -24 V
Maximum output current, signed guide value: -1.5 A
Output voltage: -4.5/-4.7/ -5/adjustable V
Maximum quiescent current: 0.3 mA
Maximum dropout: 0.2V@500mA
Die dimensions, excluding scribe lanes: 1320 x 1520 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 6

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Hailan MicroelectronicsBare die

HLW1823

LDO regulators

LANGOM referenceLAG-HL-HLW1823

HLW1823 is a positive LDO regulator die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Input-voltage endpoints, guide order: 3.0 to 18 V
Maximum output current, signed guide value: 1.5 A
Output voltage: adjustable
Maximum quiescent current: 0.1 mA
Maximum dropout: 0.22V@500mA
Die dimensions, excluding scribe lanes: 892 x 800 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 6

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Hailan MicroelectronicsBare die

HLW1823C

LDO regulators

LANGOM referenceLAG-HL-HLW1823C

HLW1823C is a positive LDO regulator die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Input-voltage endpoints, guide order: 3.0 to 18 V
Maximum output current, signed guide value: 1.5 A
Output voltage: 2.5/3.3/5/ adjustable V
Maximum quiescent current: 0.1 mA
Maximum dropout: 0.22V@500mA
Die dimensions, excluding scribe lanes: 920 x 800 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 6

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HLW1924

LDO regulators

LANGOM referenceLAG-HL-HLW1924

HLW1924 is a positive LDO regulator die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Input-voltage endpoints, guide order: 3.0 to 18 V
Maximum output current, signed guide value: 4.0 A
Output voltage: 2.5/3.3/5/ adjustable V
Maximum quiescent current: 0.2 mA
Maximum dropout: 0.22V@4A
Die dimensions, excluding scribe lanes: 2920 x 1680 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 6

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Hailan MicroelectronicsBare die

HLW2105

RF switch drivers

LANGOM referenceLAG-HL-HLW2105

HLW2105 is a GaN FET switch driver die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Supply voltage: -5V~-100V
Switching delay: ≤30ns
Die dimensions, excluding scribe lanes: 1260 x 1450 µm
Differential output voltage: 0 / VEE

Source: Hailan Product Selection Guide, 2026 V2 · page 6

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Hailan MicroelectronicsBare die

HLW2106

RF switch drivers

LANGOM referenceLAG-HL-HLW2106

HLW2106 is a GaN FET switch driver die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Supply voltage: -5V~-60V
Switching delay: ≤20ns
Die dimensions, excluding scribe lanes: 800 x 1500 µm
Differential output voltage: 0 / VEE

Source: Hailan Product Selection Guide, 2026 V2 · page 6

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Hailan MicroelectronicsBare die

HLW2107

RF switch drivers

LANGOM referenceLAG-HL-HLW2107

HLW2107 is a GaN FET switch driver die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Supply voltage: -5V~-60V
Switching delay: ≤20ns
Die dimensions, excluding scribe lanes: 950 x 1150 µm
Differential output voltage: 0 / VEE

Source: Hailan Product Selection Guide, 2026 V2 · page 6

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HLW3101

RF switch drivers

LANGOM referenceLAG-HL-HLW3101

HLW3101 is a GaAs FET switch driver die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Supply voltage: -5V/+5V
Switching delay: ≤15ns
Die dimensions, excluding scribe lanes: 520 x 870 µm
Driver channels: 2
Output levels: -5 V / 0 V or +5 V / 0 V

Source: Hailan Product Selection Guide, 2026 V2 · page 6

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HLW3102

RF switch drivers

LANGOM referenceLAG-HL-HLW3102

HLW3102 is a GaAs FET switch driver die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Supply voltage: -5V/+5V
Switching delay: ≤15ns
Die dimensions, excluding scribe lanes: 1100 x 870 µm
Driver channels: 4
Output levels: -5 V / 0 V or +5 V / 0 V

Source: Hailan Product Selection Guide, 2026 V2 · page 6

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HLW3103

RF switch drivers

LANGOM referenceLAG-HL-HLW3103

HLW3103 is a GaAs FET switch driver die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Supply voltage: -5V/+5V
Switching delay: ≤15ns
Die dimensions, excluding scribe lanes: 1680 x 870 µm
Driver channels: 6
Output levels: -5 V / 0 V or +5 V / 0 V

Source: Hailan Product Selection Guide, 2026 V2 · page 6

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Hailan MicroelectronicsBare die

HLW3201

RF switch drivers

LANGOM referenceLAG-HL-HLW3201

HLW3201 is a dual PIN switch driver die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Supply voltage: +5V/-5V +5V/-10V
Switching delay: ≤15ns
Die dimensions, excluding scribe lanes: 1640 x 870 µm
Driver channels: 2
Output levels: +5 V / -5 V or +5 V / -10 V
Maximum output current: ±100 mA

Source: Hailan Product Selection Guide, 2026 V2 · page 6

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Hailan MicroelectronicsBare die

HLW8T245

Level translators

LANGOM referenceLAG-HL-HLW8T245

HLW8T245 is an 8-channel level-translator die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Channels: 8
Logic direction: Bidirectional
Supply voltage VCC: 1.65V-5.5V
Translation range: 1.65 V to 5 V
Peak output current: ±50mA
Maximum rise / fall time: 3/3ns
Die dimensions, excluding scribe lanes: 850 x 1500 µm

Manufacturer-listed comparison references

74LVC8T245

For technical comparison. Electrical, pinout, package and application compatibility must be verified before substitution.

Source: Hailan Product Selection Guide, 2026 V2 · page 7

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HLW16T245

Level translators

LANGOM referenceLAG-HL-HLW16T245

HLW16T245 is a 16-channel level-translator die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Channels: 16
Logic direction: Bidirectional
Supply voltage VCC: 1.65V-5.5V
Translation range: 1.65 V to 5 V
Peak output current: ±50mA
Maximum rise / fall time: 3/3ns
Die dimensions, excluding scribe lanes: 850 x 3080 µm

Manufacturer-listed comparison references

74LVC16T245

For technical comparison. Electrical, pinout, package and application compatibility must be verified before substitution.

Source: Hailan Product Selection Guide, 2026 V2 · page 7

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HLW21244

Level translators

LANGOM referenceLAG-HL-HLW21244

HLW21244 is a 16-channel level-translator die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Channels: 16
Logic direction: Unidirectional
Supply voltage VCC: 4.5V-5.5V
Translation range: 3.3 V to 5 V
Peak output current: ±50mA
Maximum rise / fall time: 7/10ns
Die dimensions, excluding scribe lanes: 2820 x 1300 µm

Manufacturer-listed comparison references

74FCT16244ATPAG

For technical comparison. Electrical, pinout, package and application compatibility must be verified before substitution.

Source: Hailan Product Selection Guide, 2026 V2 · page 7

Enquire about HLW21244

Hailan MicroelectronicsBare die

HLW1817

Low-voltage MOSFET drivers

LANGOM referenceLAG-HL-HLW1817

HLW1817 is a dual MOSFET driver die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Supply voltage: 4.5V-18.0V
Logic: Dual inverting
Peak output current: 1.5A
Maximum rise / fall time: 30ns / 25ns
Die dimensions, excluding scribe lanes: 950 x 1030 µm

Manufacturer-listed comparison references

TC4426, MIC4426

For technical comparison. Electrical, pinout, package and application compatibility must be verified before substitution.

Source: Hailan Product Selection Guide, 2026 V2 · page 7

Enquire about HLW1817

Hailan MicroelectronicsBare die

HLW1917

Low-voltage MOSFET drivers

LANGOM referenceLAG-HL-HLW1917

HLW1917 is a dual MOSFET driver die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Supply voltage: 4.0V-9.0V
Logic: Dual inverting
Peak output current: 1.5A
Maximum rise / fall time: 30ns / 25ns
Die dimensions, excluding scribe lanes: 950 x 1030 µm

Manufacturer-listed comparison references

TC4426, MIC4426

For technical comparison. Electrical, pinout, package and application compatibility must be verified before substitution.

Source: Hailan Product Selection Guide, 2026 V2 · page 7

Enquire about HLW1917

Hailan MicroelectronicsBare die

HLW1917B

Low-voltage MOSFET drivers

LANGOM referenceLAG-HL-HLW1917B

HLW1917B is a dual MOSFET driver die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Supply voltage: 4.0V-12.0V
Logic: Dual inverting
Peak output current: 1.5A
Maximum rise / fall time: 30ns / 25nS
Die dimensions, excluding scribe lanes: 950 x 1030 µm

Manufacturer-listed comparison references

TC4426, MIC4426

For technical comparison. Electrical, pinout, package and application compatibility must be verified before substitution.

Source: Hailan Product Selection Guide, 2026 V2 · page 7

Enquire about HLW1917B

Hailan MicroelectronicsBare die

HLW1918

Low-voltage MOSFET drivers

LANGOM referenceLAG-HL-HLW1918

HLW1918 is a dual MOSFET driver die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Supply voltage: 4.0V-9.0V
Logic: Dual non-inverting
Peak output current: 1.5A
Maximum rise / fall time: 30ns/ 25ns
Die dimensions, excluding scribe lanes: 950 x 1030 µm

Manufacturer-listed comparison references

TC4427, MIC4427

For technical comparison. Electrical, pinout, package and application compatibility must be verified before substitution.

Source: Hailan Product Selection Guide, 2026 V2 · page 7

Enquire about HLW1918

Hailan MicroelectronicsBare die

HLW1919

Low-voltage MOSFET drivers

LANGOM referenceLAG-HL-HLW1919

HLW1919 is a dual MOSFET driver die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Supply voltage: 4.0V-9.0V
Logic: Channel A non-inverting; channel B inverting
Peak output current: 1.5A
Maximum rise / fall time: 30ns/ 25ns
Die dimensions, excluding scribe lanes: 950 x 1030 µm

Manufacturer-listed comparison references

TC4428, MIC4428

For technical comparison. Electrical, pinout, package and application compatibility must be verified before substitution.

Source: Hailan Product Selection Guide, 2026 V2 · page 7

Enquire about HLW1919

Hailan MicroelectronicsBare die

HLW20T5

Transient suppression

LANGOM referenceLAG-HL-HLW20T5

HLW20T5 is a transient-suppression die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Reverse working voltage VRWM, typical: 5 V
Reverse breakdown voltage VBR, min / max: 5.5 / 6.8 V
Breakdown test current IT: 10 mA
Clamping voltage VC: 6.8 V
Peak pulse current IPP: 5 A
Die dimensions, excluding scribe lanes: 900 x 600 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 7

Enquire about HLW20T5

Hailan MicroelectronicsBare die

HLW2028

Transient suppression

LANGOM referenceLAG-HL-HLW2028

HLW2028 is a transient-suppression die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Reverse working voltage VRWM, typical: 28 V
Reverse breakdown voltage VBR, min / max: 31 / 36 V
Breakdown test current IT: 10 mA
Clamping voltage VC: 40 V
Peak pulse current IPP: 20 A
Die dimensions, excluding scribe lanes: 1151 x 1107 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 7

Enquire about HLW2028

Hailan MicroelectronicsBare die

HLW2048

Transient suppression

LANGOM referenceLAG-HL-HLW2048

HLW2048 is a transient-suppression die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Reverse working voltage VRWM, typical: 48 V
Reverse breakdown voltage VBR, min / max: 50 / 54 V
Breakdown test current IT: 10 mA
Clamping voltage VC: 60 V
Peak pulse current IPP: 20 A
Die dimensions, excluding scribe lanes: 1611 x 1557 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 7

Enquire about HLW2048

Hailan MicroelectronicsBare die

HLW2060

Transient suppression

LANGOM referenceLAG-HL-HLW2060

HLW2060 is a transient-suppression die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Reverse working voltage VRWM, typical: 60 V
Reverse breakdown voltage VBR, min / max: 63 / 66 V
Breakdown test current IT: 10 mA
Clamping voltage VC: 80 V
Peak pulse current IPP: 20 A
Die dimensions, excluding scribe lanes: 1851 x 1776 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 7

Enquire about HLW2060

Hailan MicroelectronicsBare die

HLW2102

Logic gates

LANGOM referenceLAG-HL-HLW2102

HLW2102 is a logic-gate die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Function: Four 2-input gates; AND, OR, NAND or NOR selected with C1/C2
Supply voltage VCC: 2V-6V
Output current: 16mA
Frequency: 20MHz
Maximum rise / fall time: 8ns/8ns
Die dimensions, excluding scribe lanes: 585 x 860 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 8

Enquire about HLW2102

Hailan MicroelectronicsBare die

HLW6201

Logic gates

LANGOM referenceLAG-HL-HLW6201

HLW6201 is a logic-gate die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Function: Single AND gate
Supply voltage VCC: 4.5V-15V
Output current: 16mA
Frequency: 20MHz
Maximum rise / fall time: 10ns/10ns
Die dimensions, excluding scribe lanes: 520 x 400 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 8

Enquire about HLW6201

Hailan MicroelectronicsBare die

HLW6202

Logic gates

LANGOM referenceLAG-HL-HLW6202

HLW6202 is a logic-gate die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Function: Single OR gate
Supply voltage VCC: 4.5V-15V
Output current: 16mA
Frequency: 20MHz
Maximum rise / fall time: 10ns/10ns
Die dimensions, excluding scribe lanes: 520 x 400 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 8

Enquire about HLW6202

Hailan MicroelectronicsBare die

HLW6203

Logic gates

LANGOM referenceLAG-HL-HLW6203

HLW6203 is a logic-gate die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Function: Single NAND gate
Supply voltage VCC: 4.5V-15V
Output current: 16mA
Frequency: 20MHz
Maximum rise / fall time: 10ns/10ns
Die dimensions, excluding scribe lanes: 520 x 400 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 8

Enquire about HLW6203

Hailan MicroelectronicsBare die

HLW1816

DC/DC converters

LANGOM referenceLAG-HL-HLW1816

HLW1816 is a synchronous buck-converter die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Input-voltage range: 4.0V-30V
Output voltage: Adjustable
Peak output current: 3A
Switching frequency: 400kHz
Die dimensions, excluding scribe lanes: 1160 x 2320 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 8

Enquire about HLW1816

Hailan MicroelectronicsBare die

HLW2104

RF detector circuits

LANGOM referenceLAG-HL-HLW2104

HLW2104 is an RF detector interface die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection data & references

Supply voltage VDD: 2.5V-5.5V
Differential-amplifier gain: 2.5x / 5x / 10x / 20x
Comparator delay: ≤45 ns
Internal reference: 3.2 V, adjustable
Differential-amplifier bandwidth: ≥5 MHz
Die dimensions, excluding scribe lanes: 1160 x 1100 µm

Source: Hailan Product Selection Guide, 2026 V2 · page 8

Enquire about HLW2104

Hailan MicroelectronicsNot specified in radiation table

HLW1801S

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW1801S

HLW1801S is a radiation-tolerant low-voltage PMOS transistor listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 30 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW1801S

Hailan MicroelectronicsNot specified in radiation table

HLW1802S

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW1802S

HLW1802S is a radiation-tolerant low-voltage PMOS transistor listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 40 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW1802S

Hailan MicroelectronicsNot specified in radiation table

HLW1804S

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW1804S

HLW1804S is a radiation-tolerant high-voltage PMOS transistor listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 30 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW1804S

Hailan MicroelectronicsNot specified in radiation table

HLW1806S

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW1806S

HLW1806S is a radiation-tolerant high-voltage PMOS transistor listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 20 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW1806S

Hailan MicroelectronicsNot specified in radiation table

HLW1817S

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW1817S

HLW1817S is a radiation-tolerant dual PMOS driver listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 40 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW1817S

Hailan MicroelectronicsNot specified in radiation table

HLW1917S

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW1917S

HLW1917S is a radiation-tolerant dual PMOS driver listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 30 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW1917S

Hailan MicroelectronicsNot specified in radiation table

HLW1918S

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW1918S

HLW1918S is a radiation-tolerant dual non-inverting PMOS driver listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 30 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW1918S

Hailan MicroelectronicsNot specified in radiation table

HLW2111BS

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW2111BS

HLW2111BS is a radiation-tolerant single-channel supply modulator listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 30 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW2111BS

Hailan MicroelectronicsNot specified in radiation table

HLW2117S

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW2117S

HLW2117S is a radiation-tolerant single-channel supply modulator listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 40 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW2117S

Hailan MicroelectronicsNot specified in radiation table

HLW2118S

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW2118S

HLW2118S is a radiation-tolerant single-channel supply modulator listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 20 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW2118S

Hailan MicroelectronicsNot specified in radiation table

HLW2119S

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW2119S

HLW2119S is a radiation-tolerant dual-channel supply modulator listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 30 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW2119S

Hailan MicroelectronicsNot specified in radiation table

HLW2116

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW2116

HLW2116 is a radiation-tolerant single-channel supply modulator listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 30 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW2116

Hailan MicroelectronicsNot specified in radiation table

HLW2204AS

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW2204AS

HLW2204AS is a radiation-tolerant integrated high-voltage supply modulator listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 40 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW2204AS

Hailan MicroelectronicsNot specified in radiation table

HLW2204BS

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW2204BS

HLW2204BS is a radiation-tolerant integrated high-voltage supply modulator listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 40 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW2204BS

Hailan MicroelectronicsNot specified in radiation table

HLW1822S

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW1822S

HLW1822S is a radiation-tolerant negative linear regulator listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 50 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW1822S

Hailan MicroelectronicsNot specified in radiation table

HLW1922S

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW1922S

HLW1922S is a radiation-tolerant negative-voltage regulator listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 50 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW1922S

Hailan MicroelectronicsNot specified in radiation table

HLW1823CS

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW1823CS

HLW1823CS is a radiation-tolerant adjustable positive-voltage regulator listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 50 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW1823CS

Hailan MicroelectronicsNot specified in radiation table

HLW1924S

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW1924S

HLW1924S is a radiation-tolerant positive-voltage regulator listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 50 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW1924S

Hailan MicroelectronicsNot specified in radiation table

HLW1823S

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW1823S

HLW1823S is a radiation-tolerant adjustable positive-voltage regulator listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 30 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW1823S

Hailan MicroelectronicsNot specified in radiation table

HLW2103

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW2103

HLW2103 is a radiation-tolerant negative-voltage driver listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 30 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW2103

Hailan MicroelectronicsNot specified in radiation table

HLW2001S

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW2001S

HLW2001S is a radiation-tolerant temperature-compensated negative gate-bias driver listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 20 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW2001S

Hailan MicroelectronicsNot specified in radiation table

HLW2112S

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW2112S

HLW2112S is a radiation-tolerant single-channel supply modulator listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 40 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW2112S

Hailan MicroelectronicsNot specified in radiation table

HLW2104S

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW2104S

HLW2104S is a radiation-tolerant amplifier and comparator detector circuit listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 50 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW2104S

Hailan MicroelectronicsNot specified in radiation table

HLW2102S

Radiation-tolerant circuits

LANGOM referenceLAG-HL-HLW2102S

HLW2102S is a radiation-tolerant logic-gate circuit listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

TID is a manufacturer guide claim only. Test method, dose rate, bias conditions and independent qualification are not supplied; no space/military certification is claimed.

Total ionizing dose, guide-listed: 30 krad(Si)

Source: Hailan Product Selection Guide, 2026 V2 · page 9

Enquire about HLW2102S

Hailan MicroelectronicsPackaged IC

HLW2101P

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW2101P

HLW2101P is an N-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW2101P

Hailan MicroelectronicsPackaged IC

HLW1700ST

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1700ST

HLW1700ST is an N-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOT-23
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1700ST

Hailan MicroelectronicsPackaged IC

HLW1720PD

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1720PD

HLW1720PD is a dual N-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1720PD

Hailan MicroelectronicsPackaged IC

HLW1706P

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1706P

HLW1706P is an N-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1706P

Hailan MicroelectronicsPackaged IC

HLW1711P

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1711P

HLW1711P is an N-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1711P

Hailan MicroelectronicsPackaged IC

HLW1711PD

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1711PD

HLW1711PD is a dual N-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1711PD

Hailan MicroelectronicsPackaged IC

HLW1713FN

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1713FN

HLW1713FN is an N-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: PDFN5*6-8L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1713FN

Hailan MicroelectronicsPackaged IC

HLW1712FN

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1712FN

HLW1712FN is an N-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: PDFN5*6-8L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1712FN

Hailan MicroelectronicsPackaged IC

HLW1715P

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1715P

HLW1715P is an N-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1715P

Hailan MicroelectronicsPackaged IC

HLW1717T

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1717T

HLW1717T is an N-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: TO-220
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1717T

Hailan MicroelectronicsPackaged IC

HLW1801P

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1801P

HLW1801P is a P-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1801P

Hailan MicroelectronicsPackaged IC

HLW1802P

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1802P

HLW1802P is a P-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1802P

Hailan MicroelectronicsPackaged IC

HLW1802SP

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1802SP

HLW1802SP is a dual P-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1802SP

Hailan MicroelectronicsPackaged IC

HLW1803BP

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1803BP

HLW1803BP is a P-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1803BP

Hailan MicroelectronicsPackaged IC

HLW1803BPD

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1803BPD

HLW1803BPD is a dual P-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1803BPD

Hailan MicroelectronicsPackaged IC

HLW1804P

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1804P

HLW1804P is a P-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1804P

Hailan MicroelectronicsPackaged IC

HLW1804FN

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1804FN

HLW1804FN is a P-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: DFN3*3-8L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1804FN

Hailan MicroelectronicsPackaged IC

HLW1806P

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1806P

HLW1806P is a P-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1806P

Hailan MicroelectronicsPackaged IC

HLW1806S3

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1806S3

HLW1806S3 is a P-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOT-223
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1806S3

Hailan MicroelectronicsPackaged IC

HLW1806ST

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1806ST

HLW1806ST is a P-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOT-23-3
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1806ST

Hailan MicroelectronicsPackaged IC

HLW1806PD

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1806PD

HLW1806PD is a dual P-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1806PD

Hailan MicroelectronicsPackaged IC

HLW1807P

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1807P

HLW1807P is a P-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1807P

Hailan MicroelectronicsPackaged IC

HLW1811P

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1811P

HLW1811P is a P-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1811P

Hailan MicroelectronicsPackaged IC

HLW1811FN

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1811FN

HLW1811FN is a P-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: PDFN5*6-8L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1811FN

Hailan MicroelectronicsPackaged IC

HLW1812P

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1812P

HLW1812P is a P-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1812P

Hailan MicroelectronicsPackaged IC

HLW1809P

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1809P

HLW1809P is a P-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1809P

Hailan MicroelectronicsPackaged IC

HLW1809T

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1809T

HLW1809T is a P-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: TO-252
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1809T

Hailan MicroelectronicsPackaged IC

HLW1810FN

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1810FN

HLW1810FN is a P-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: PDFN5*6-8L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1810FN

Hailan MicroelectronicsPackaged IC

HLW1831FN

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1831FN

HLW1831FN is a P-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: PDFN5*6-8L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1831FN

Hailan MicroelectronicsPackaged IC

HLW1832FN

Packaged MOSFETs

LANGOM referenceLAG-HL-HLW1832FN

HLW1832FN is a P-channel MOSFET listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: PDFN5*6-8L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1832FN

Hailan MicroelectronicsPackaged IC

HLW1817P

Low-voltage MOSFET drivers

LANGOM referenceLAG-HL-HLW1817P

HLW1817P is a dual PMOS driver IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1817P

Hailan MicroelectronicsPackaged IC

HLW1817BDF

Low-voltage MOSFET drivers

LANGOM referenceLAG-HL-HLW1817BDF

HLW1817BDF is a dual PMOS driver IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: DFN2*2-8L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1817BDF

Hailan MicroelectronicsPackaged IC

HLW1917P

Low-voltage MOSFET drivers

LANGOM referenceLAG-HL-HLW1917P

HLW1917P is a dual PMOS driver IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1917P

Hailan MicroelectronicsPackaged IC

HLW1918P

Low-voltage MOSFET drivers

LANGOM referenceLAG-HL-HLW1918P

HLW1918P is a dual non-inverting PMOS driver IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1918P

Hailan MicroelectronicsPackaged IC

HLW1918FN

Low-voltage MOSFET drivers

LANGOM referenceLAG-HL-HLW1918FN

HLW1918FN is a dual non-inverting PMOS driver IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: DFN3*3-8L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1918FN

Hailan MicroelectronicsPackaged IC

HLW1919P

Low-voltage MOSFET drivers

LANGOM referenceLAG-HL-HLW1919P

HLW1919P is a dual PMOS driver IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 10

Enquire about HLW1919P

Hailan MicroelectronicsPackaged IC

HLW1816P

DC/DC converters

LANGOM referenceLAG-HL-HLW1816P

HLW1816P is a DC/DC converter IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: ESOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW1816P

Hailan MicroelectronicsPackaged IC

HLW1822P

LDO regulators

LANGOM referenceLAG-HL-HLW1822P

HLW1822P is a negative-voltage regulator IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOT-89
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW1822P

Hailan MicroelectronicsPackaged IC

HLW1825BP

LDO regulators

LANGOM referenceLAG-HL-HLW1825BP

HLW1825BP is a negative linear-regulator IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW1825BP

Hailan MicroelectronicsPackaged IC

HLW1825BFN

LDO regulators

LANGOM referenceLAG-HL-HLW1825BFN

HLW1825BFN is a negative linear-regulator IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: DFN3*3-8L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW1825BFN

Hailan MicroelectronicsPackaged IC

HLW1922P

LDO regulators

LANGOM referenceLAG-HL-HLW1922P

HLW1922P is a negative-voltage regulator IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: ESOP-16
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW1922P

Hailan MicroelectronicsPackaged IC

HLW1922FN

LDO regulators

LANGOM referenceLAG-HL-HLW1922FN

HLW1922FN is a negative-voltage regulator IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: DFN3*3-8L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW1922FN

Hailan MicroelectronicsPackaged IC

HLW1823HA

LDO regulators

LANGOM referenceLAG-HL-HLW1823HA

HLW1823HA is a adjustable positive-voltage regulator IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: ESOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW1823HA

Hailan MicroelectronicsPackaged IC

HLW1823FN

LDO regulators

LANGOM referenceLAG-HL-HLW1823FN

HLW1823FN is a adjustable positive-voltage regulator IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: DFN2*2-8L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW1823FN

Hailan MicroelectronicsPackaged IC

HLW1823CP

LDO regulators

LANGOM referenceLAG-HL-HLW1823CP

HLW1823CP is a positive-voltage regulator IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: ESOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW1823CP

Hailan MicroelectronicsPackaged IC

HLW1823CFN

LDO regulators

LANGOM referenceLAG-HL-HLW1823CFN

HLW1823CFN is a positive-voltage regulator IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: DFN2*2-8L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW1823CFN

Hailan MicroelectronicsPackaged IC

HLW1924FN

LDO regulators

LANGOM referenceLAG-HL-HLW1924FN

HLW1924FN is a positive-voltage regulator IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: QFN5*5-20L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW1924FN

Hailan MicroelectronicsPackaged IC

HLW1826BFN

Positive-to-negative converters

LANGOM referenceLAG-HL-HLW1826BFN

HLW1826BFN is a positive-to-negative voltage converter listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: QFN3*3-16L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW1826BFN

Hailan MicroelectronicsPackaged IC

HLW2003FN

Negative gate-bias drivers

LANGOM referenceLAG-HL-HLW2003FN

HLW2003FN is a negative gate-bias driver IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: QFN3*3-16L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW2003FN

Hailan MicroelectronicsPackaged IC

HLW2006ST

Negative gate-bias drivers

LANGOM referenceLAG-HL-HLW2006ST

HLW2006ST is a single-channel adjustable gate-bias driver IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOT23-5
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW2006ST

Hailan MicroelectronicsPackaged IC

HLW2111BP

Low-voltage supply modulation

LANGOM referenceLAG-HL-HLW2111BP

HLW2111BP is a single-channel supply-modulator IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW2111BP

Hailan MicroelectronicsPackaged IC

HLW2113FN

Low-voltage supply modulation

LANGOM referenceLAG-HL-HLW2113FN

HLW2113FN is a dual supply-modulator and gate-bias driver IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: QFN5*5-40L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW2113FN

Hailan MicroelectronicsPackaged IC

HLW2117P

Low-voltage supply modulation

LANGOM referenceLAG-HL-HLW2117P

HLW2117P is a single-channel supply-modulator IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW2117P

Hailan MicroelectronicsPackaged IC

HLW2117FN

Low-voltage supply modulation

LANGOM referenceLAG-HL-HLW2117FN

HLW2117FN is a single-channel supply-modulator IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: QFN3*3-16L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW2117FN

Hailan MicroelectronicsPackaged IC

HLW2118P

Low-voltage supply modulation

LANGOM referenceLAG-HL-HLW2118P

HLW2118P is a single-channel supply-modulator IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW2118P

Hailan MicroelectronicsPackaged IC

HLW2016FN

Low-voltage supply modulation

LANGOM referenceLAG-HL-HLW2016FN

HLW2016FN is a integrated supply-modulator IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: DFN3*3-8L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW2016FN

Hailan MicroelectronicsPackaged IC

HLW2119P

Low-voltage supply modulation

LANGOM referenceLAG-HL-HLW2119P

HLW2119P is a dual supply-modulator IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-14
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW2119P

Hailan MicroelectronicsPackaged IC

HLW2119FN

Low-voltage supply modulation

LANGOM referenceLAG-HL-HLW2119FN

HLW2119FN is a dual supply-modulator IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: QFN3*3-16L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW2119FN

Hailan MicroelectronicsPackaged IC

HLW2201BFN

High-voltage supply modulation

LANGOM referenceLAG-HL-HLW2201BFN

HLW2201BFN is a high-voltage PMOS driver IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: QFN5*5-40L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW2201BFN

Hailan MicroelectronicsPackaged IC

HLW2202BFN

High-voltage supply modulation

LANGOM referenceLAG-HL-HLW2202BFN

HLW2202BFN is a high-voltage nmos driver IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: QFN5*5-20L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW2202BFN

Hailan MicroelectronicsPackaged IC

HLW2203FN

High-voltage supply modulation

LANGOM referenceLAG-HL-HLW2203FN

HLW2203FN is a high-voltage PMOS driver IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: QFN3*3-16L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW2203FN

Hailan MicroelectronicsPackaged IC

HLW2204BFN

High-voltage supply modulation

LANGOM referenceLAG-HL-HLW2204BFN

HLW2204BFN is a integrated high-voltage supply-modulator IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: DFN3*3-8L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW2204BFN

Hailan MicroelectronicsPackaged IC

HLW2208FN

High-voltage supply modulation

LANGOM referenceLAG-HL-HLW2208FN

HLW2208FN is a high-voltage PMOS and gate-bias driver IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: QFN5*5-40L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW2208FN

Hailan MicroelectronicsPackaged IC

HLW2209FN

High-voltage supply modulation

LANGOM referenceLAG-HL-HLW2209FN

HLW2209FN is a high-voltage PMOS driver IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: DFN3*3-16L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW2209FN

Hailan MicroelectronicsPackaged IC

HLW2028P

Transient suppression

LANGOM referenceLAG-HL-HLW2028P

HLW2028P is a transient-suppression device listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW2028P

Hailan MicroelectronicsPackaged IC

HLW2048P

Transient suppression

LANGOM referenceLAG-HL-HLW2048P

HLW2048P is a transient-suppression device listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW2048P

Hailan MicroelectronicsPackaged IC

HLW2060P

Transient suppression

LANGOM referenceLAG-HL-HLW2060P

HLW2060P is a transient-suppression device listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: SOP-8
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW2060P

Hailan MicroelectronicsPackaged IC

HLW2060FN

Transient suppression

LANGOM referenceLAG-HL-HLW2060FN

HLW2060FN is a transient-suppression device listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: DFN4*4-8L
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW2060FN

Hailan MicroelectronicsPackaged IC

HLW8T245P

Level translators

LANGOM referenceLAG-HL-HLW8T245P

HLW8T245P is an 8-channel level-translator IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: TSSOP24
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW8T245P

Hailan MicroelectronicsPackaged IC

HLW16T245P

Level translators

LANGOM referenceLAG-HL-HLW16T245P

HLW16T245P is a 16-channel level-translator IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: TSSOP48
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW16T245P

Hailan MicroelectronicsPackaged IC

HLW21244P

Level translators

LANGOM referenceLAG-HL-HLW21244P

HLW21244P is a 16-channel level-translator IC listed in Hailan's 2026 V2 selection guide. The values below retain the model and format identified in the guide.

Selection data & references

Package, guide designation: TSSOP48
Listed commercial grade: Industrial

Source: Hailan Product Selection Guide, 2026 V2 · page 11

Enquire about HLW21244P

FROM SELECTION TO SPECIFICATION

Make the next step precise.

Send the original designation, required quantity, operating conditions and delivery destination. For alternatives, include the existing datasheet and the parameters that must remain unchanged.

LAG codes are LANGOM enquiry references. They do not replace manufacturer part numbers or imply verified interchangeability.

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Li Wentao
Project Manager
liwentao@langom.com

+852 6950 5867