Hailan Microelectronics
HLW1715
Bare die · MOSFET bare die
Selection details
HLW1715 is an N-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.
Selection-guide values support initial evaluation. Obtain the exact model datasheet and operating limits before design qualification.
RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.
- Manufacturer
- Wuxi Hailan Microelectronics Technology Co., Ltd
- Record type
- Bare die
- Original designation
- HLW1715
- LANGOM enquiry reference
- LAG-HL-HLW1715
- Channel type
- N-channel
- Drain-source voltage VDSS
- 150 V
- Gate-source voltage VGSS
- ±20 V
- Drain current ID
- 18 A
- Pulsed drain current IDM
- 54 A
- On-resistance RDS(on), guide value
- 55 mΩ
- VGS(th), guide Min / Max
- 2.5 / 4.5 V
- Input capacitance CISS, typical
- 600 pF
- Die dimensions, excluding scribe lanes
- 1970 x 1730 µm
Source: Hailan Product Selection Guide, 2026 V2 · page 2
LAG codes are LANGOM enquiry references. They do not replace manufacturer part numbers or establish interchangeability.
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