Hailan Microelectronics
HLW1803B
Bare die · MOSFET bare die
Selection details
HLW1803B is a P-channel MOSFET bare die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.
Selection-guide values support initial evaluation. Obtain the exact model datasheet and operating limits before design qualification.
RDS(on) column header is VGS=10V for the entire table, including PMOS rows; do not infer a signed PMOS test condition. Obtain the exact datasheet before design qualification.
- Manufacturer
- Wuxi Hailan Microelectronics Technology Co., Ltd
- Record type
- Bare die
- Original designation
- HLW1803B
- LANGOM enquiry reference
- LAG-HL-HLW1803B
- Channel type
- P-channel
- Drain-source voltage VDSS
- -30 V
- Gate-source voltage VGSS
- ±20 V
- Drain current ID
- -12 A
- Pulsed drain current IDM
- -48 A
- On-resistance RDS(on), guide value
- 12 mΩ
- VGS(th), guide Min / Max
- -1 / -2.0 V
- Input capacitance CISS, typical
- 1740 pF
- Die dimensions, excluding scribe lanes
- 1900 x 1462 µm
Source: Hailan Product Selection Guide, 2026 V2 · page 2
LAG codes are LANGOM enquiry references. They do not replace manufacturer part numbers or establish interchangeability.
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