Hailan Microelectronics

HLW2201B

Bare die · High-voltage supply modulation

Selection details

HLW2201B is a GaN amplifier drain-supply modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.

Selection-guide values support initial evaluation. Obtain the exact model datasheet and operating limits before design qualification.

Manufacturer
Wuxi Hailan Microelectronics Technology Co., Ltd
Record type
Bare die
Original designation
HLW2201B
LANGOM enquiry reference
LAG-HL-HLW2201B
Driver architecture
External PMOS driver
Supply voltage VCC
9V-90V
Maximum rise / fall time
30ns/40ns
Die dimensions, excluding scribe lanes
2650 x 2380 µm
External transistor required
PMOS

Source: Hailan Product Selection Guide, 2026 V2 · page 4

LAG codes are LANGOM enquiry references. They do not replace manufacturer part numbers or establish interchangeability.

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