Hailan Microelectronics
HLW2202B
Bare die · High-voltage supply modulation
Selection details
HLW2202B is a GaN amplifier drain-supply modulation die listed in Hailan's 2026 V2 selection guide. The guide specifies the following die-level parameters.
Selection-guide values support initial evaluation. Obtain the exact model datasheet and operating limits before design qualification.
- Manufacturer
- Wuxi Hailan Microelectronics Technology Co., Ltd
- Record type
- Bare die
- Original designation
- HLW2202B
- LANGOM enquiry reference
- LAG-HL-HLW2202B
- Driver architecture
- External NMOS driver
- Supply voltage VCC
- 9V-100V
- Maximum rise / fall time
- 20ns/30ns
- Die dimensions, excluding scribe lanes
- 2670 x 2390 µm
- External transistor required
- NMOS
Source: Hailan Product Selection Guide, 2026 V2 · page 4
LAG codes are LANGOM enquiry references. They do not replace manufacturer part numbers or establish interchangeability.
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